Article

Goswami, Lalit and Aggarwal, Neha and Verma, Rajni and Bishnoi, Swati and Husale, Sudhir and Pandey, Rajeshwari and Gupta, Govind (2020) Graphene Quantum Dot-Sensitized ZnO-Nanorod/GaN-Nanotower Heterostructure-Based High-Performance UV Photodetectors. ACS Applied Materials and Interfaces, 12 (41). pp. 47038-47047. ISSN 1944-8244

Goswami, Lalit and Aggarwal, Neha and Singh, Manjri and Verma, Rajni and Vashishtha, Pargam and Jain, Shubhendra K. and Tawale, Jai and Pandey, Rajeshwari and Gupta, Govind (2020) GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors. ACS Applied Nano Material, 3 (8). pp. 8104-8116. ISSN 2574-0970

Krishna, Shibin and Aggarwal, Neha and Gundimeda, Abhiram and Sharma, Alka and Husale, Sudhi and Maurya, K. K. and Gupta, Govind (2019) Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector. Materials Science in Semiconductor Processing, 98. 59-64. ISSN 1369-8001

Aggarwal, Neha and Krishna, Shibin and Jain, Shubhendra Kumar and Mishra, Monu and Maurya, K. K. and Singh, Sandeep and Kaur, Mandeep and Gupta, Govind (2019) Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions. Materials Science and Engineering: B , 243. pp. 71-77. ISSN 0921-5107

Jain, Shubhendra Kumar and Mishra, Monu and Aggarwal, Neha and Krishna, Shibin and Gahtori, Bhasker and Pandey, Akhilesh and Gupta, Govind (2018) Influence of temperature and A1/N ratio on structural, chemical & electronic properties of epitaxial A1N films grown via PAMBE. Applied Surface Science, 455. pp. 919-923. ISSN 0169-4332

Jain, Shubhendra Kumar and Aggarwal, Neha and Krishna, Shibin and Kumar, Rahul and Husale, Sudhir and Gupta, Vinay and Gupta, Govind (2018) GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity. Journal of Materials Science: Materials in Electronics, 29 (11). pp. 8958-8963. ISSN 0957-4522

Mishra, Monu and Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Goswami, Lalit and Gahtori, Bhasker and Bhattacharyya, Biplab and Husale, Sudhir and Gupta, Govind (2018) Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors. ACS Omega, 3 (2). pp. 2304-2311. ISSN 2470-1343

Krishna, Shibin and Reddy, Anurag G. and Aggarwal, Neha and Kaur, Mandeep and Husale, Sudhir and Singh, Dinesh and Singh, Manju and Rakshit, Rajib and Maurya, K. K. and Gupta, Govind (2017) Enhanced current transport in GaN/AlN based single and double barrier heterostructures. Solar Energy Materials and Solar Cells , 170. pp. 160-166. ISSN 0927-0248

Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Sharma, Alka and Sharma, Nita Dilawar and Maurya, K. K. and Husale, Sudhir and Gupta, Govind (2017) Erratum: “Fabrication of non-polar GaN based highly responsive and fast UV photodetector” [Appl. Phys. Lett. 110, 103507 (2017)]. Applied Physics Letters, 111 (019901). ISSN 0003-6951

Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gundimeda, Abhiram and Gupta, Govind (2017) Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure. Journal of Alloys and Compounds, 708. pp. 385-391. ISSN 0925-8388

Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gupta, Govind (2017) Influence of metallic surface states on electron affinity of epitaxial AlN films. Applied Surface Science, 407. pp. 255-259. ISSN 0169-4332

Aggarwal, Neha and Krishna, Shibin and Sharma, Alka and Goswami, Lalit and Kumar, Dinesh and Husale, Sudhir and Gupta, Govind (2017) A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers. Advanced Electronic Materials, 3 (5). 1700036-1-1700036-7. ISSN 2199-160X

Mishra, Monu and Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Gahtori, Bhasker and Dilawar, Nita and Aggarwal, Ved Varun and Singh, Manju and Rakshit, Rajib and Gupta, Govind (2017) Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films. Physical Chemistry Chemical Physics, 9 (13). pp. 8787-8801. ISSN 1463-9076

Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Sharma, Alka and Sharma, Nita Dilawar and Maurya, K. K. and Husale, Sudhir and Gupta, Govind (2017) Fabrication of non-polar GaN based highly responsive and fast UV photodetector. Applied Physics Letters, 110 (103507). ISSN 0003-6951

Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K. K. and Singh, Sandeep and Dilawar, Nita and Nagarajan, Subramaniyam and Gupta, Govind (2016) Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE. Physical Chemistry Chemical Physics, 18 (11). pp. 8005-8014. ISSN 1463-9076

Aggarwal, Neha and Krishna, Shibin and Mishra, Monu and Maurya, K. K. and Gupta, Govind (2016) Influence of active nitrogen species on surface and optical properties of epitaxial GaN films. Journal of Alloys and Compounds, 661. 461-465 . ISSN 0925-8388

Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K. K. and Kaur, Mandeep and Sehgal, Geetanjali and Singh, Sukhveer and Dilawar, Nita and Gupta, Bipin Kumar and Gupta, Govind (2016) Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate. Journal of Alloys and Compounds, 658. pp. 470-475. ISSN 0925-8388

Mishra, Monu and Krishna TC, Shibin and Aggarwal, Neha and Vihari, Saket and Gupta, Govind (2015) Electronic structure analysis of GaN films grown on r- and a-plane sapphire. Journal of Alloys and Compounds, 645. pp. 230-234. ISSN 0925-8388

Mishra, Monu and Krishna, T. C. Shibin and Aggarwal, Neha and Gupta, Govind (2015) Surface chemistry and electronic structure of nonpolar and polar GaN films. Applied Surface Science, 345. 440-447 . ISSN 0169-4332

Reddy, Anurag G. and Aggarwal, Neha and T. C., Shibin Krishna and Singh, Manju and Rakshit, Rajib and Gupta, Govind (2015) Correlation of current-voltage-temperature analysis with deep level defects in epitaxial GaN films. Applied Physics Letters, 106 (23). pp. 233501-1. ISSN 0003-6951

Aggarwal, Neha and Krishna, Shibin T. C. and Goswami, Lalit and Mishra, Monu and Gupta, Govind and Maurya, K. K. and Singh, Sandeep and Dilawar, Nita and Kaur, Mandeep (2015) Extenuation of Stress and Defects in GaN Films Grown on a Metal-Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth and Design , 15 (5). pp. 2144-2150. ISSN 1528-7483

Dugar, Palak and Kumar, Mahesh and T. C, Shibin Krishna and Aggarwal, Neha and Gupta, Govind (2015) Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy. RSC Advances, 5 (102). pp. 83969-83975. ISSN 2046-2069

Mishra, Monu and Shibin, Krishna T. C. and Aggarwal, Neha and Singh, Sandeep and Gupta, Govind (2015) Pit assisted oxygen chemisorption on GaN surfaces. Physical Chemistry Chemical Physics, 17 (23). pp. 15201-15208. ISSN 1463-9076

Krishna, T. C. Shibin and Aggarwal, Neha and Reddy, G. Anurag and Dugar, Palak and Mishra, Monu and Goswami, Lalit and Dilawar, Nita and Kumar, Mahesh and Maurya, K. K. and Gupta, Govind (2015) Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (11(2)over-bar0) sapphire grown by rf-molecular beam epitaxy. RSC Advances, 5 (89). pp. 73261-73267. ISSN 2046-2069

Mishra, Monu and Krishna, Shibin TC and Aggarwal, Neha and Vihari, Saket and Chauhan, Amit Kumar Singh and Gupta, Govind (2014) A Comparative Photoelectron Spectroscopic Analysis of MBE and MOCVD Grown Epitaxial GaN Films. Science of Advanced Materials, 6. pp. 1-6. ISSN 1947-2935