Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gupta, Govind (2017) Influence of metallic surface states on electron affinity of epitaxial AlN films. Applied Surface Science, 407. pp. 255-259. ISSN 0169-4332

[img] PDF - Published Version
Restricted to Registered users only

Download (1482Kb) | Request a copy


The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6-1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2-3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Chemistry > Physical Chemistry
Materials Science
Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 29 Oct 2018 11:07
Last Modified: 29 Oct 2018 11:07
URI: http://npl.csircentral.net/id/eprint/2747

Actions (login required)

View Item View Item