Mishra, Monu and Krishna, Shibin and Aggarwal, Neha and Gundimeda, Abhiram and Gupta, Govind (2017) Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure. Journal of Alloys and Compounds, 708. pp. 385-391. ISSN 0925-8388

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The present article reports electronic structure, chemical and defect states analysis of Quasi-continuous GaN film, nanoflowers decorated nanostructured GaN and nanoflowers decorated AlGaN/GaN hetero-structure. The nanostructured GaN and AlGaN surfaces were decorated with nanoflowers having a size variation between 200 and 400 nm. Extensive photoemission analysis was performed to analyse surface chemistry and electronic structure and their correlation with surface morphology. Indication of free electron accumulation was perceived by the observed downwards band bending at the interface of AlGaN/GaN heterostructure. The optical response inveterate defects minimization in nanoflower decorated GaN and AlGaN/GaN heterostructure and the presence of minimum residual stress.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier
Subjects: Chemistry > Physical Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Depositing User: Users 27 not found.
Date Deposited: 06 Sep 2018 10:45
Last Modified: 06 Sep 2018 10:45
URI: http://npl.csircentral.net/id/eprint/2689

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