Aggarwal, Neha and Krishna, Shibin and Jain, Shubhendra Kumar and Mishra, Monu and Maurya, K. K. and Singh, Sandeep and Kaur, Mandeep and Gupta, Govind (2019) Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions. Materials Science and Engineering: B , 243. pp. 71-77. ISSN 0921-5107

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The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux ratio on Si (111) substrate via plasma-assisted molecular beam epitaxy has been investigated. The transformations in microstructures of AlN grown along the c-plane were explored as a function of N-2-flow rate, growth temperature and Al-flux. The structural analysis carried out using high resolution X-ray diffraction reveals single crystalline quality with reduced full widths at half maximum value of 15 arcmin corresponding to a screw dislocation density of 8.5 x 10(8) cm(-2). The topographical study of AlN grown by modulating growth conditions revealed an average surface roughness of 6.9 nm. It was exemplified that interplay between higher growth temperature and nitrogen flow rate is desired to prevent condensation of metallic Al on the surface. Also, the AlN pertaining less screw dislocation density leads to lower dark current which can be fruitful for various optoelectronic applications like vacuum-UV photodetectors.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Materials Science
Depositing User: Mr. Yogesh Joshi
Date Deposited: 31 Dec 2020 11:39
Last Modified: 31 Dec 2020 11:39

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