Jain, Shubhendra Kumar and Aggarwal, Neha and Krishna, Shibin and Kumar, Rahul and Husale, Sudhir and Gupta, Vinay and Gupta, Govind (2018) GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity. Journal of Materials Science: Materials in Electronics, 29 (11). pp. 8958-8963. ISSN 0957-4522

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Fabrication of very thin GaN ultraviolet photodetectors on Si (111) substrate integrated with asymmetric (Pt-Ag, Pt-Cr) metal-semiconductor-metal (MSM) structure have been illustrated. Designed GaN photodetection device displays significant enhancement in responsivity for asymmetric (Pt-Ag) MSM structure (280 mA/W) in comparison to symmetric (Pt-Pt) MSM structure (126 mA/W) at 10 V bias. The fabricated asymmetric and symmetric devices also exhibit fast response time in the range of 30-59 ms. The enhancement in responsivity using asymmetric MSM structure ascribed to large difference in work function which lead to change in Schottky barrier height of the metal semiconductor junction. Additionally, power dependent photoresponse analysis of GaN asymmetric (Pt-Ag) ultraviolet photodetector was showing a responsivity of 116 mA/W at low optical power of 1 mW. Such GaN asymmetric MSM ultraviolet photodetectors having high responsivity can extensively be used for low power, high speed ultraviolet photo detection applications

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Springer Verlag.
Subjects: Engineering > Electronics and Electrical Engineering
Materials Science
Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 10 Dec 2019 11:33
Last Modified: 10 Dec 2019 11:33
URI: http://npl.csircentral.net/id/eprint/3823

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