Gundimeda, Abhiram and Krishna, Shibin and Aggarwal, Neha and Sharma, Alka and Sharma, Nita Dilawar and Maurya, K. K. and Husale, Sudhir and Gupta, Govind (2017) Erratum: “Fabrication of non-polar GaN based highly responsive and fast UV photodetector” [Appl. Phys. Lett. 110, 103507 (2017)]. Applied Physics Letters, 111 (019901). ISSN 0003-6951

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We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Institute of Physics.
Subjects: Applied Physics/Condensed Matter
Depositing User: Users 27 not found.
Date Deposited: 06 Sep 2018 11:21
Last Modified: 06 Sep 2018 11:21

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