Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K. K. and Kaur, Mandeep and Sehgal, Geetanjali and Singh, Sukhveer and Dilawar, Nita and Gupta, Bipin Kumar and Gupta, Govind (2016) Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate. Journal of Alloys and Compounds, 658. pp. 470-475. ISSN 0925-8388

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Growth characteristics of high Indium content InGaN/GaN heterostructure on a-plane (11 (2) over bar0) sapphire substrate by plasma assisted molecular beam epitaxy have been investigated in detail. The structural analysis is carried out by high-resolution X-ray diffraction measurements. A reduction in the lattice constant by 0.15% confirms the highly crystalline nature of the grown GaN film. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with less hexagonally pitted GaN surface. This high quality MBE grown GaN on (11 (2) over bar0) sapphire is utilized as a template to grow InGaN film with high indium composition (41%). The elemental distribution and thickness of the grown film is ascertained by Secondary Ion Mass Spectroscopy which demonstrates a sharp interface between the grown structure. The photoluminescence emission spectrum shows a sharp near band edge emission of GaN at 3.42 eV along with a broad band emission related to defects and near band edge emission of InGaN (1.9 +/- 0.05 eV) at room temperature. This study provides a new insight into the structural quality of In-rich InGaN/GaN based heterostructures on a-plane sapphire, which could be useful to develop highly-efficient nitride solar cell devices.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Uncontrolled Keywords: InGaN a-plane sapphire MBE HRXRD
Subjects: Chemistry > Physical Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Depositing User: Dr. Rajpal Walke
Date Deposited: 17 Nov 2017 11:42
Last Modified: 17 Nov 2017 11:42

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