Aggarwal, Neha and Krishna, Shibin and Sharma, Alka and Goswami, Lalit and Kumar, Dinesh and Husale, Sudhir and Gupta, Govind (2017) A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers. Advanced Electronic Materials, 3 (5). 1700036-1-1700036-7. ISSN 2199-160X

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The rising demand for optoelectronic devices to be operable in adverse environments necessitates the sensing of ultraviolet (UV) radiation. Here, a self-driven, highly sensitive, fast responding GaN nanoflower based UV photodetector is reported. By developing unique structures, the light absorption increases efficiently and a maximum responsivity of 10.5 A W-1 is achieved at 1 V bias. The reported responsivity is the highest among the GaN UV photodetectors on Si substrates and commercially available Si-based UV photodetectors. Under self-driven condition, the photodetector exhibits very low dark current (approximate to nA) with a very high responsivity (132 mA W-1) and detectivity (2.4 x 10(10) Jones). A remarkably high light-to-dark current ratio of approximate to 260 signifies extremely high photodetection gain compared to planar GaN-based photodetectors. The self-driven and biased photodetector device yields highly stable rise and decay time response. A model based on band theory elucidates the origin of self-driven photodetectors. Implementation of the innovative growth design structures assures an exceptionally high sensitivity toward UV signal, which is capable of substituting the existing technology of UV photo-detectors. High responsivity and detectivity from devices based on the GaN nanoflower-like structure with the advantage of high surface/volume ratio can have numerous applications in fabrication of nanoscale optoelectronic high performance devices such as self-driven UV photodetectors.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Wiley.
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Depositing User: Users 27 not found.
Date Deposited: 09 Aug 2018 08:43
Last Modified: 09 Aug 2018 08:43

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