Aggarwal, Neha and Krishna, Shibin T. C. and Goswami, Lalit and Mishra, Monu and Gupta, Govind and Maurya, K. K. and Singh, Sandeep and Dilawar, Nita and Kaur, Mandeep (2015) Extenuation of Stress and Defects in GaN Films Grown on a Metal-Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth and Design , 15 (5). pp. 2144-2150. ISSN 1528-7483

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We investigated curbing the defects and stress/strain in epitaxially grown crystalline GaN films on a metal organic chemical vapor deposition-GaN/c-sapphire (MGcS) template by using plasma-assisted molecular beam epitaxy and demonstrated the impact of growth temperature on their structural, morphological, and optical properties. An in-plane compressive stress having a minimum value of 0.34 GPa has been investigated by vibrational spectroscopy. This alleviated stress was attributed to a less pitted and smoother surface morphology along with reduced threading dislocation densities. Moreover, photoluminescence measurements explicate reduced yellow band emissions relative to near-band edge emission for the film grown under optimum growth conditions. The stress-relaxed and defect-free crystalline GaN film can further be utilized for tremendous optoelectronic and photonic based applications.

Item Type: Article
Subjects: Chemistry
Materials Science
Depositing User: Dr. Rajpal Walke
Date Deposited: 23 Sep 2016 05:24
Last Modified: 23 Sep 2016 05:24

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