Article

Tyagi, Prashant and Ramesh, Ch and Kaswan, Jyoti and Dhua, Swati and John, Subish and Shukla, Ajay Kumar and Roy, Somnath C. and Kushvaha, Sunil Singh and Muthusamy, Senthil Kumar (2019) Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting. Journal of Alloys and Compounds, 805. pp. 97-103. ISSN 0925-8388

Tyagi, Prashant and Ramesh, Ch. and Kushvaha, S. S. and Kumar, M. Senthil (2019) AlGaN nanowall network structure grown on sapphire (0001) substrate by laser molecular beam epitaxy. Materials Science in Semiconductor Processing, 89. pp. 143-148. ISSN 1369-8001

Ramesh, Chodipilli and Tyagi, Prashant and Singh, Sandeep and Singh, Preetam and Gupta, Govind and Maurya, Kamlesh Kumar and Srivatsa, Kuchibhotla Murali Krishna and Kumar, Muthusamy Senthil and Kushvaha, Sunil Singh (2018) Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures , 36 (4). 04G102-04G107. ISSN 1071-1023

Ramesh, Ch. and Tyagi, Prashant and Yadav, B. S. and Ojha, S. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0001) grown by laser MBE. Materials Science and Engineering: B , 231. pp. 105-114. ISSN 0921-5107

Tyagi, Prashant and Ch., Ramesh and Kushvaha, S. S. and Mishra, Monu and Gupta, Govind and Yadav, B. S. and Kumar, M. Senthil (2018) Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001). Journal of Alloys and Compounds, 739. pp. 122-128. ISSN 0925-8388

Kushvaha, S. S. and Ramesh, Ch. and Tyagi, Prashant and Shukla, A. K. and Yadav, B. S. and Dilawar, N. and Maurya, K. K. and Kumar, M. Senthil (2017) Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy. Journal of Alloys and Compounds, 703. pp. 466-476. ISSN 0925-8388