Tyagi, Prashant and Ch., Ramesh and Kushvaha, S. S. and Mishra, Monu and Gupta, Govind and Yadav, B. S. and Kumar, M. Senthil (2018) Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001). Journal of Alloys and Compounds, 739. pp. 122-128. ISSN 0925-8388

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We report the successful growth of AlxGa1-xN (0 <= x <= 0.25) epitaxial films on c-plane sapphire substrate by using laser molecular beam epitaxy technique. The role of growth temperature on the Al incorporation and the structural, electronic and optical properties of the AlxGa1-xN epitaxial layers grown in the temperature range 500-700 degrees C have been systematically studied. The atomic force microscopy analysis shows that the grain size of AlxGa1-xN increases with increase in growth temperature and flat surface epilayers are obtained at >= 600 degrees C. The Al incorporation is confirmed with high resolution x-ray diffraction, x-ray photo electron microscopy and photoluminescence studies. It is observed that the growth temperature plays a critical role in determining the Al composition, which increases with increasing growth temperature. AlxGa1-xN layer with about 23% of Al composition is obtained on sapphire (0001) substrate at a growth temperature of 700 degrees C, which is about 100-150 degrees C lower than the conventional molecular beam epitaxy growth.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Elsevier.
Subjects: Materials Science
Metallurgy & Metallurgical Engineering
Physical Chemistry/Chemical Physics
Depositing User: Mr. Yogesh Joshi
Date Deposited: 29 Nov 2019 11:04
Last Modified: 29 Nov 2019 11:04
URI: http://npl.csircentral.net/id/eprint/3881

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