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Number of items: 21.

Article

Tyagi, Prashant and Ramesh, Ch. and Kushvaha, S. S. and Kumar, M. Senthil (2019) AlGaN nanowall network structure grown on sapphire (0001) substrate by laser molecular beam epitaxy. Materials Science in Semiconductor Processing, 89. pp. 143-148. ISSN 1369-8001

Ramesh, Ch and Tyagi, P. and Singh, P. and Kumar, A. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy. Materials Research Express, 5 (9). 095902-095909. ISSN 2053-1591

Ramesh, Ch. and Tyagi, Prashant and Yadav, B. S. and Ojha, S. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0001) grown by laser MBE. Materials Science and Engineering: B , 231. pp. 105-114. ISSN 0921-5107

Tyagi, Prashant and Ch., Ramesh and Kushvaha, S. S. and Mishra, Monu and Gupta, Govind and Yadav, B. S. and Kumar, M. Senthil (2018) Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001). Journal of Alloys and Compounds, 739. pp. 122-128. ISSN 0925-8388

Thakre, Atul and Kushvaha, Sunil Singh and Kumar, M. Senthil and Kumar, Ashok (2018) Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network. RSC Advances , 8 (57). pp. 32794-32798. ISSN 2046-2069

Kushvaha, S. S. and Ramesh, Ch. and Tyagi, Prashant and Shukla, A. K. and Yadav, B. S. and Dilawar, N. and Maurya, K. K. and Kumar, M. Senthil (2017) Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy. Journal of Alloys and Compounds, 703. pp. 466-476. ISSN 0925-8388

Dixit, Ripudaman and Tyagi, Prashan and Kushvaha, Sunil Singh and Chockalingam, Sreekumar and Yadav, Brajesh Singh and Sharma, Nita Dilawar and Kumar, M. Senthil (2017) Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire. Optical Materials, 66. pp. 142-148. ISSN 0925-3467

Ch, Ramesh and Tyagi, P. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2017) Growth and Characterizations of various GaN Nanostructures on C-plane Sapphire using Laser MBE. Solid State Physics: Proceedings Of The 55th DAE Solid State Physics Symposium 2010, PTS A and B, 1832 (080078). 080078-1-080078-3. ISSN 0094-243X

Kushvaha, S. S. and Kumar, M. Senthil and Yadav, B. S. and Tyagi, Pawan K. and Ojha, Sunil and Maurya, K. K. and Singh, B. P. (2016) Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy. CrystEngComm, 18 (5). pp. 744-753. ISSN 1466-8033

Chhikara, Deepak and Kumar, M. Senthil and Srivatsa, K. M. K. (2015) On the synthesis of Zn/ZnO core-shell solid microspheres on quartz substrate by thermal evaporation technique. Superlattices and Microstructures, 82. pp. 368-377. ISSN 0749-6036

Kumar, M. Senthil and Srivatsa, K. M. K. and Kushvaha, S. S. (2015) Detection of dislocation-related midgap levels in pulsed laser deposited GaN by photo-induced current transient spectroscopy. physica status solidi (b), 252 (4). 800-803 . ISSN 0370-1972

Kushvaha, S. S. and Kumar, M. Senthil and Shukla, A. K. and Yadav, B. S. and Singh, Dilip K. and Jewariya, M. and Ragam, S. R. and Maurya, K. K. (2015) Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy. RSC Advances, 5 (107). 87818 -87830. ISSN 2046-2069

Kumar, M. Senthil and Kushvaha, S. S. and Maurya, K. K. (2014) Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target. Science of Advanced Materials, 6 (6). pp. 1215-1220. ISSN 1947-2935

Kushvaha, Sunil S. and Kumar, M. Senthil and Gupta, Bipin K. and Maurya, K. K. (2014) Laser Molecular Beam Epitaxy Growth of GaN layer on Sapphire (0001) under various process conditions. PHYSICS OF SEMICONDUCTOR DEVICES Book Series: Environmental Science and Engineering: Environmental Engineering. pp. 873-876.

Kumar, M. Senthil and Kushvaha, S. S. and Maurya, K. K. (2014) Low Temperature Growth of GaN Epitaxial Layer on Sapphire (0001) Substrate by Laser Molecular Beam Epitaxy Technique. Physics of Semiconductor Devices, Environmental Science and Engineering. pp. 807-809.

Srivatsa, K. M. K. and Chhikara, Deepak and Kumar, M. Senthil (2012) Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique. Journal of Materials Science and Technology , 28 (4). pp. 317-320. ISSN 1005-0302

Chung, S. J. and Kumar, M. Senthil and Lee, Y. S. and Suh, E-K and An, M. H. (2010) Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition. Journal of Applied Physics D: Applied Physics, 43 (185101). pp. 1-4. ISSN 1361-6463

Srivatsa, K. M. K. and Chhikara, Deepak and Kumar, M. Senthil (2011) Synthesis of Aligned ZnO Nanorod Array on Silicon and Sapphire Substrates by Thermal Evaporation Technique. Journal of Materials Science and Technology , 27 (8). pp. 701-706. ISSN 1005-0302

Srivatsa, K. M. K. and Chhikara, Deepak and Kumar, M. Senthil (2011) Synthesis of Anatase Titania Nanostructures at Room Temperature by PECVD Technique. Journal of Materials Science and Technology , 27 (8). pp. 696-700. ISSN 1005-0302

Kumar, M. Senthil and Chhikara, D. and Srivatsa, K. M. K. (2011) Structure-controlled growth of ZnO nanonails by thermal evaporation technique. Crystal Research and Technology , 46 (9). pp. 991-996. ISSN 1521-4079

Kumar, M. Senthil and Chhikara, Deepak and Srivatsa, K. M. K. (2011) Growth of self-assembled ZnO rods cellular network over a large area by thermal evaporation method. Materials Letters , 65 (12). 1938 -1940. ISSN 0167-577X

This list was generated on Fri Mar 5 23:56:25 2021 IST.