Bora, Deepika and Bhattacharya, Shrestha and Kumar, Nitin and Mallick, Aishik Basu and Srivastava, Avriti and Dutta, Mrinal and Srivastava, Sanjay K. and Prathap, P. and Rauthan, C. M. S. and Sadasivuni, KK and Kurian, J and Damodaran, SV and Joseph, J and Joseph, D and Tom, E and Thomas, D (2019) Performance Limitation of Si Nanowire Solar Cells: Effects of Nanowire Length and Surface Defects. AIP Conference Proceedings, 2162. 020115-1-020115-4. ISSN 0094-243X
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Abstract
In Si nanowire (SiNW) solar cells enhanced light confinement property in addition to decoupling of charge carrier collection and light absorption directions plays a significant role to resolve the draw backs of bulk Si solar cells. In this report we have studied the dependence of the phovoltaic properties of Si NW array solar cells on the SiNW length and enhanced surface defect states as a result of enhanced surface area of the NWs. The SiNW arrays have been fabricated using metal catalyzed electroless etching (MCEE) technique. p-n junction has been produced by spin-on-dopant technique followed by thermal diffusion process. Front and rear electrodes have been deposited by e-beam evaporation techniques. SiNW lengths have been controlled from similar to 320 nm to 6.4.m by controlling the parameters of MCEE technique. Photovoltaic properties of the solar cells have been characterized by measuring quantum efficiency and photocurrent density vs. voltage characteristics. Morphological studies have been carried out by using scanning electron microscopy. Reduction in light trapping capability comes at the benefit of reduced surface defects. The reduction of surface defects has been proved to be more advantageous in comparison to the decrement of light trapping capability. The major contribution to the changes in cell efficiency comes from the enhancement of short circuit current density with a very weak dependence on open circuit voltage. This work is beneficial for the production of commercial Si solar cells where SiNW arrays could be used as an antireflection coating instead of using separate antireflection layers. Thus could reduced the production cost.
| Item Type: | Article |
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| Additional Information: | Copyright for this article belongs to M/s American Institute of Physics. |
| Subjects: | Materials Science Applied Physics/Condensed Matter |
| Divisions: | UNSPECIFIED |
| Depositing User: | Mr. Yogesh Joshi |
| Date Deposited: | 19 Aug 2026 11:47 |
| Last Modified: | 19 Aug 2026 11:47 |
| URI: | https://npl.csircentral.net/id/eprint/4413 |
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