Tomer, Shweta and -, Vandana and Panigrahi, Jagannath and Srivastava, Ritu and Rauthan, C. M. S (2019) Importance of precursor delivery mechanism for Tetra-kis-ethylmethylaminohafnium/water atomic layer deposition process. Thin Solid Films, 692 ( 13762). 13762-1- 13762-7. ISSN 0040-6090
|
PDF
- Published Version
Download (1305Kb) | Preview |
Abstract
The present work investigates the importance of incorporating a boosting mechanism in an Atomic Layer Deposition (ALD) process for the delivery of a low vapour pressure precursor in the reaction chamber. Here we show that in the absence of the boosting mechanism, saturated growth was compromised and poor-quality films were obtained characterized by film non-uniformity and variable refractive index within the sample. We demonstrate that a boosting sequence of 0.5 s + 0.9 s with precursor bottle heating temperature of 120 degrees C was sufficient to produce good quality films showing saturated growth in our system. Furthermore, we demonstrate that for Tetra-kis-ethylmethylaminohafnium/water ALD process, the ALD window for hafnium oxide was found to be in the temperature range 300 degrees C-375 degrees C where the average growth per cycle and refractive index of the films deposited within the ALD window were found to be 1.16 A/cycle and 2.00 respectively.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright for this article belongs to M/s Elsevier. |
| Subjects: | Materials Science Applied Physics/Condensed Matter |
| Divisions: | UNSPECIFIED |
| Depositing User: | Mr. Yogesh Joshi |
| Date Deposited: | 19 Aug 2026 11:46 |
| Last Modified: | 19 Aug 2026 11:46 |
| URI: | https://npl.csircentral.net/id/eprint/4380 |
Actions (login required)
 |
View Item |
