Dwivedi, Neeraj and Kumar, Sushil and Carey, J. D. and Malik, Hitendra K. and -, Govind (2012) Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films. Journal of Applied Physics , 112 (11). pp. 113706-113714. ISSN 0021-8979 (Unpublished)

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Abstract

The observation and origin of photoconductivity in high base pressure (similar to 10(-3) Torr) grown nitrogen incorporated hydrogenated amorphous carbon (a-C:H:N) thin films is reported. The magnitude of conductivity at room temperature was measured to increase by nearly two orders of magnitude and exhibits a maximum ratio of photoconductivity to dark conductivity of 1.5 as the nitrogen content increased to 15.1 at. %. X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and Fourier transform infrared spectroscopy reveal enhanced sp(2) bonding at higher nitrogen contents. Residual film stress, Tauc band gap, hardness, and elastic modulus are all found to decrease with addition of nitrogen. The electrical characteristics suggest the creation of a-C:H:N/p-Si heterojunction diodes having rectifying behavior. The conductivity and electrical characteristics are discussed in term of band model, and the results show that high quality a-C:H:N films can be grown at high base pressures with properties comparable to those grown at low base pressures.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s American Institute of Physics
Subjects:	Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 11:04
Last Modified:	19 Aug 2026 11:04
URI:	https://npl.csircentral.net/id/eprint/3456

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