Nedzinskas, Ramunas and Cechavicius,, Bronislovas and Kavaliauskas, Julius and Karpus, Vytautas and Valusis, Gintaras and Li, Lianhe and Khanna, Suraj P. and Linfield, Edmund H. (2012) Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As-2 and As-4 sources. Nanoscale Research Letters , 7 ( 609). ISSN 1931-7573

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Abstract

We report photoreflectance (PR) and photoluminescence (PL) investigations of the electronic and polarization properties of different aspect ratio (height/diameter) InGaAs quantum rods (QRs) embedded in InGaAs quantum wells (QWs). These nanostructures were grown by molecular beam epitaxy using As(2)or As(4)sources. The impact of the As source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast between the QR material and the surrounding well. Polarized PR and PL measurements reveal that the polarization has a preferential direction along the crystal axis with a large optical anisotropy of about 60% in the (001) plane for high aspect ratio (4.1:1) InGaAs QRs. As a result, in PL spectra, the transverse magnetic mode dominated -cleaved surfaces (TM[001]> TE[110]), whereas the transverse electric mode prevailed for (110)-cleaved surfaces (). This strong optical anisotropy in the (001) plane is interpreted in terms of the hole wavefunction orientation along the direction for high aspect ratio QRs.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s SpringerOpen
Subjects:	Materials Science Applied Physics/Condensed Matter Nanoscience/ Nanotechnology
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 11:03
Last Modified:	19 Aug 2026 11:03
URI:	https://npl.csircentral.net/id/eprint/3451

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