Shinde, S. S. and Shinde, P. S. and Oh, Y. W. and Haranath, D. and Bhosale, C. H. and Rajpure, K. Y. (2012) Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films. Applied Surface Science, 258 (24). 9969-9976. ISSN 0169-4332

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Abstract

Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E-2(high) mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Chemistry > Physical Chemistry Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 10:58
Last Modified:	19 Aug 2026 10:58
URI:	https://npl.csircentral.net/id/eprint/3407

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