Shkir, Mohd. and Vijayan, N. and Vijayan, N. and Nasir, Mohd. and Wahab, M. A. and Bhagavannarayana, G. (2013) Characterization of ZnSe single crystal grown by VBT using two zone tubular furnace: An excellent material for optoelectronic devices. Optik , 124 (11). pp. 985-989. ISSN 0030-4026

PDF - Published Version Restricted to Registered users only Download (472Kb) | Request a copy

Abstract

ZnSe single crystal of size similar to 25 mm lengths and similar to 10 mm diameter was grown by vertical Bridgman technique using two zone tubular furnace from the synthesized polycrystal of the compound. The powder X-ray diffraction analysis confirmed the crystal system of the grown crystal. The optical band gap of the grown crystal was calculated and found to be similar to 2.704 eV by UV-vis-NIR analysis. The crystalline perfection was assessed by using high-resolution X-ray diffractometer (HRXRD) and chemical etching studies which reveals that the grown crystal has good crystalline perfection. The etch pit dislocation density was calculated and found to be 2 x 10(6) cm(-2). Good crystalline perfection and less dislocation density of the grown crystals makes, it important for optoelectronic device fabrications. The dielectric studies were also done over a wide range of frequency 100 Hz to 10 MHz at room temperature.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Optics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 10:39
Last Modified:	19 Aug 2026 10:39
URI:	https://npl.csircentral.net/id/eprint/3319

Actions (login required)

View Item