Khan, Firoz and Ameen, Sadia and Song, Minwu and Husain, Mushahid and Mobin, Abdul and Shin, Hyung Shik (2013) Effect of Al concentration on photoluminescence properties of sol-gel derived hydrogen annealed ZnO. Metals and Materials International , 19 (2). pp. 245-250. ISSN 1598-9623

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Abstract

The effect of the Al/Zn atomic ratio on the photoluminescence properties of hydrogen annealed undoped and Al rich ZnO (AZO) films was studied. The Al/Zn atomic ratios in the AZO films were varied from 0 to 40%. All the AZO films exhibited three peaks in the UV, green and red regions, whereas the undoped ZnO films had two peaks in the UV and green regions. The PL intensity in the UV and red regions increased with an increase in Al concentrations. The highest PL intensity in the UV region was observed in the 20% Al/Zn atomic ratio due to improvement in crystal quality which was also confirmed by XRD measurements. The PL emission in the red region was due to complex luminescent centers like (V-zn-Al-zn)(-). A blue shift was seen in the red region with the introduction of Al. The 20% AZO films obtained the strongest signal at -420 cm(-1), whereas no FTIR signal was observed at 420 cm(-1) in undoped ZnO. The bond signature at -420 cm(-1) might be responsible for the highest PL intensity in NBE and red regions.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Springer Verlag
Subjects:	Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 10:21
Last Modified:	19 Aug 2026 10:21
URI:	https://npl.csircentral.net/id/eprint/3286

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