Gope, Jhuma and Kumar, Sushi and Sudhakar, S. and Rauthan, C. M. S. and Srivastava, P. C. (2013) Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique. Materials Chemistry and Physics, 141 (1). 89-94. ISSN 0254-0584

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Abstract

Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV-visible (UV-Vis) spectroscopy. Different crystalline volume fraction (22%-60%) and band gap (similar to 1.58 eV-similar to 1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10(-4) Omega(-1) cm(-1).

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 10:14
Last Modified:	19 Aug 2026 10:14
URI:	https://npl.csircentral.net/id/eprint/3268

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