Swamy, G. Venkat and Pandey, Himanshu and Srivastava, A. K. and Dalai, M. K. and Maurya, K. K. and -, Rashmi and Rakshit, R. K. (2013) Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films. AIP Advances, 7 (3). 072129-072137. ISSN 2158-3226
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Abstract
We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400 degrees C results in crystallization of CoFe with bcc structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H-c) of 5Oe while the films annealed at 400 degrees C are metallic with a H-c of 135Oe.
| Item Type: | Article |
|---|---|
| Additional Information: | copyright for this article belongs to M/s American Institute of Physics |
| Subjects: | Materials Science Applied Physics/Condensed Matter Nanoscience/ Nanotechnology |
| Divisions: | UNSPECIFIED |
| Depositing User: | Users 27 not found. |
| Date Deposited: | 19 Aug 2026 10:14 |
| Last Modified: | 19 Aug 2026 10:14 |
| URI: | https://npl.csircentral.net/id/eprint/3266 |
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