Abdullah, M. M. and Singh, Preeti and Hasmuddin, Mohd and Bhagavannarayana, G. and Wahab, M. A. (2013) In situ growth and ab initio optical characterizations of amorphous Ga3Se4 thin film: A new chalcogenide compound semiconductor thin film. Scripta Materialia, 69 (5). pp. 381-384. ISSN 1359-6462

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Abstract

This paper reports the first systematic study of the structural and optical characterization of Ga3Se4 thin film. Powder X-ray diffractometery analysis revealed that the films are amorphous. Optical reflection and transmittance measurements have been done by UV-visible-near-infrared spectrophotometry, and the values of various optical constants, such as the lower cut-off wavelength (550 nm), optical band gap (2.14 eV), dispersive energy (6.75 eV), oscillator energy (2.86 eV), static refractive index (1.83) and static dielectric constant (3.35), have been estimated.

Item Type:	Article
Additional Information:	copyright for this article belongs to M/s Elsevier
Subjects:	Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Aug 2026 09:49
Last Modified:	19 Aug 2026 09:49
URI:	https://npl.csircentral.net/id/eprint/3174

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