Swamy, G. Venkat and Pandey, Himanshu and Srivastava, A. K. and Dalai, M. K. and Maurya, K. K. and -, Rashmi and Rakshit, R. K. (2013) Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films. AIP Advances, 7 (3). 072129-072137. ISSN 2158-3226

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Abstract

We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400 degrees C results in crystallization of CoFe with bcc structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H-c) of 5Oe while the films annealed at 400 degrees C are metallic with a H-c of 135Oe.

Item Type: Article
Additional Information: copyright for this article belongs to M/s American Institute of Physics
Subjects: Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
Divisions: UNSPECIFIED
Depositing User: Users 27 not found.
Date Deposited: 19 Aug 2026 10:14
Last Modified: 19 Aug 2026 10:14
URI: https://npl.csircentral.net/id/eprint/3266

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