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Article

Ramesh, Ch. and Tyagi, Prashant and Yadav, B. S. and Ojha, S. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0001) grown by laser MBE. Materials Science and Engineering: B , 231. pp. 105-114. ISSN 0921-5107

Tyagi, Prashant and Ch., Ramesh and Kushvaha, S. S. and Mishra, Monu and Gupta, Govind and Yadav, B. S. and Kumar, M. Senthil (2018) Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001). Journal of Alloys and Compounds, 739. pp. 122-128. ISSN 0925-8388

Kushvaha, S. S. and Ramesh, Ch. and Tyagi, Prashant and Shukla, A. K. and Yadav, B. S. and Dilawar, N. and Maurya, K. K. and Kumar, M. Senthil (2017) Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy. Journal of Alloys and Compounds, 703. pp. 466-476. ISSN 0925-8388

Kushvaha, S. S. and Kumar, M. Senthil and Yadav, B. S. and Tyagi, Pawan K. and Ojha, Sunil and Maurya, K. K. and Singh, B. P. (2016) Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy. CrystEngComm, 18 (5). pp. 744-753. ISSN 1466-8033

Kushvaha, S. S. and Kumar, M. Senthil and Shukla, A. K. and Yadav, B. S. and Singh, Dilip K. and Jewariya, M. and Ragam, S. R. and Maurya, K. K. (2015) Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy. RSC Advances, 5 (107). 87818 -87830. ISSN 2046-2069

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