Panwar, O. S. and Khan, M. A. and Satyanarayana, B. S. and Bhattacharyya, R. and Mehta , B. R. and Kumar, S. and -, Ishpal (2010) Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films. Journal of Vacuum Science and Technology B , 28 (2). pp. 411-422. ISSN 1520-8567

Panwar, O. S. and Khan, Mohd Alim and Satyanarayana, B. S. and Kumar, Sushil and -, Ishpal (2010) Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process. Applied Surface Science, 256 (13). pp. 4383-4390. ISSN 0169-4332

Panwar, O. S. and Khan, Mohd Alim and Dixit, P. N. and Satyanarayana, B. S. and Bhattacharyya, R. and Kumar , Sushil and Rauthan, C. M. S. (2008) Plasma diagnostic studies of S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films. Indian Journal of Pure and Applied Physics , 46 (4). 255-260 . ISSN 0019-5596

Panwar, O. S. and Khan, Mohd. Alim and Bhattacharjee, B. and Pal, A. K. and Satyanarayana, B. S. and Dixit, P. N. and Bhattacharyya, R. and Khan, M. Y. (2006) Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process. Thin Solid Films, 515. pp. 1597-1606. ISSN 0040-6090

De, Shounak and Gope, Jhuma and Satyanarayana, B. S. and Panwar, O. S. and Rao, Mohan (2010) DETERMINATION OF DENSITY-OF-STATES OF NANOCLUSTER CARBON THIN FILMS MIS STRUCTURE USING CAPACITANCE–VOLTAGE TECHNIQUE. Modern Physics Letters B , 25 (10). 763-772. ISSN 1793-6640

Panwar, O. S. and Khan, Mohd. Alim and Kumar, Mahesh and Shivaprasad , S. M. and Satyanarayana, B. S. and Dixit, P. N. and Bhattacharyya, R. and Khan, M. Y. (2008) Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films. Thin Solid Films, 516 (8). pp. 2331-2340. ISSN 0040-6090