Article

Ramesh, Ch and Tyagi, P. and Gautam, S. and Ojha, S. and Kumar, M. Senthil and Kushvaha, S. S. (2020) Influence of substrate nitridation on properties of GaN nanorods grown on molybdenum foil by laser molecular beam epitaxy. Physica B: Condensed Matter, 591. pp. 412255-412260. ISSN 0921-4526

Tyagi, Prashant and Ramesh, Ch. and Kushvaha, S. S. and Kumar, M. Senthil (2019) AlGaN nanowall network structure grown on sapphire (0001) substrate by laser molecular beam epitaxy. Materials Science in Semiconductor Processing, 89. pp. 143-148. ISSN 1369-8001

Ramesh, Ch and Tyagi, P. and Singh, P. and Kumar, A. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of HfO2 nitridation on structural, optical and electrical properties of GaN films grown on HfO2/Si(100) by laser molecular beam epitaxy. Materials Research Express, 5 (9). 095902-095909. ISSN 2053-1591

Ramesh, Ch. and Tyagi, Prashant and Yadav, B. S. and Ojha, S. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2018) Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0001) grown by laser MBE. Materials Science and Engineering: B , 231. pp. 105-114. ISSN 0921-5107

Tyagi, Prashant and Ch., Ramesh and Kushvaha, S. S. and Mishra, Monu and Gupta, Govind and Yadav, B. S. and Kumar, M. Senthil (2018) Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001). Journal of Alloys and Compounds, 739. pp. 122-128. ISSN 0925-8388

Jha, Sarvottam K. and Kumari, Reetu and Choudhary, Shubham and Guha, Puspendu and Satyam, P. V. and Yadav, Brajesh S. and Naqvi, Zainab and Kushvaha, S. S. and Ratnesh, R. K. and Mehata, M. S. and Jain, Aditya and Panwar, Amrish K. and Singh, Fouran and Tyagi, Pawan K. (2018) Facile Synthesis of Semiconducting Ultrathin Layer of Molybdenum Disulfide. Journal of Nanoscience and Nanotechnology, 18 (1). pp. 614-622. ISSN 1533-4880

Kushvaha, S. S. and Ramesh, Ch. and Tyagi, Prashant and Shukla, A. K. and Yadav, B. S. and Dilawar, N. and Maurya, K. K. and Kumar, M. Senthil (2017) Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy. Journal of Alloys and Compounds, 703. pp. 466-476. ISSN 0925-8388

Ch, Ramesh and Tyagi, P. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2017) Growth and Characterizations of various GaN Nanostructures on C-plane Sapphire using Laser MBE. Solid State Physics: Proceedings Of The 55th DAE Solid State Physics Symposium 2010, PTS A and B, 1832 (080078). 080078-1-080078-3. ISSN 0094-243X

Kushvaha, S. S. and Kumar, M. Senthil and Yadav, B. S. and Tyagi, Pawan K. and Ojha, Sunil and Maurya, K. K. and Singh, B. P. (2016) Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy. CrystEngComm, 18 (5). pp. 744-753. ISSN 1466-8033

Kumar, M. Senthil and Srivatsa, K. M. K. and Kushvaha, S. S. (2015) Detection of dislocation-related midgap levels in pulsed laser deposited GaN by photo-induced current transient spectroscopy. physica status solidi (b), 252 (4). 800-803 . ISSN 0370-1972

Kushvaha, S. S. and Kumar, M. Senthil and Shukla, A. K. and Yadav, B. S. and Singh, Dilip K. and Jewariya, M. and Ragam, S. R. and Maurya, K. K. (2015) Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy. RSC Advances, 5 (107). 87818 -87830. ISSN 2046-2069

Kumar, M. Senthil and Kushvaha, S. S. and Maurya, K. K. (2014) Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target. Science of Advanced Materials, 6 (6). pp. 1215-1220. ISSN 1947-2935

Kushvaha, S. S. and Pal, P. and Shukla, A. K. and Joshi, Amish G. and Gupta, Govind and Kumar, M. and Singh, S. and Gupta, Bipin K. and Haranath, D. (2014) Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy. AIP Advances, 4 (2). 027114-1-027114-10. ISSN 2158-3226

Kumar, M. Senthil and Kushvaha, S. S. and Maurya, K. K. (2014) Low Temperature Growth of GaN Epitaxial Layer on Sapphire (0001) Substrate by Laser Molecular Beam Epitaxy Technique. Physics of Semiconductor Devices, Environmental Science and Engineering. pp. 807-809.

Kushvaha, S. S. and Kumar, M. Senthil and Maurya, K. K. and Dalai, M. K. and Sharma, Nita D. (2013) Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target. AIP Advances, 3 (9). 092109-092119. ISSN 2158-3226

Kushvaha, S. S. and Zhang, H. L. and Yan, Z. and Wee, A. T. S. and Wang, X. S. (2012) Growth of self-assembled Mn, Sb and MnSb nanostructures on highly oriented pyrolytic graphite. Thin Solid Films, 520 (23). pp. 6909-6915. ISSN 0040-6090