Kumar, Sushil and Dixit, P. N. and Rauthan, C. M. S. and Parashar , A . and Gope, Jhuma (2008) Effect of power on the growth of nanocrystalline silicon films. Journal Of Physics: Condensed Matter, 20 (33). 335215-1-335215-7. ISSN 0953-8984

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Abstract

Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20–100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm−1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S IOP Publishing.
Subjects:	Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	06 Jan 2014 11:07
Last Modified:	06 Jan 2014 11:07
URI:	http://npl.csircentral.net/id/eprint/997

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