Srivastava, A. K. (2008) Direct evidence for electron beam irradiation-induced phenomena in nanowired ZnO thin films. Materials Letters , 32 (27). pp. 4296-4298. ISSN 0167-577X
PDF
- Published Version
Restricted to Registered users only Download (703Kb) | Request a copy |
Abstract
In-situ electron beam induced microstructural transformation experiments, leading to porosity in nanowires of ZnO, have been performed under a TEM operated at an electron accelerating voltage of 200 kV. For this purpose, nanowired (diameter: 20 to 80 nm) films of ZnO with thickness ~ 100 to 120 nm, were grown via metal-catalyst free-vapor phase mechanism. The evolved porosity (pore size about 2 to 20 nm) in nanowires, under electron beam irradiation, has been attributed to different bond-breaking phenomena at molecular Zn–O. Such nanoporous objects of ZnO are beneficial for various optical and sensing devices.
Item Type: | Article |
---|---|
Additional Information: | Copyright for this article belongs to M/s Elsevier B.V. |
Subjects: | Materials Science Physics |
Divisions: | UNSPECIFIED |
Depositing User: | Ms Neetu Chandra |
Date Deposited: | 11 Jul 2013 10:12 |
Last Modified: | 11 Jul 2013 10:12 |
URI: | http://npl.csircentral.net/id/eprint/978 |
Actions (login required)
View Item |