Singh, Bharti and Mehta, B. R. and -, Govind and Feng, X. and Mullen, Klaus (2011) Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer. Applied Physics Letters, 99 (22). 222109 . ISSN 1077-3118

Preview

PDF - Published Version Download (1046Kb) | Preview

Abstract

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

Item Type:	Article
Uncontrolled Keywords:	bipolar transistor switches; copper compounds; graphene; hybrid integrated circuits; rectifying circuits
Subjects:	Applied Physics/Condensed Matter Physics
Divisions:	UNSPECIFIED
Depositing User:	Mr. Abhishek Yadav
Date Deposited:	18 Dec 2012 07:28
Last Modified:	18 Dec 2012 07:28
URI:	http://npl.csircentral.net/id/eprint/881

Actions (login required)

View Item