V. , Carcelen and J. , Rodrıguez-Fernandez and N. , Vijayan and P. , Hidalgo and J. , Piqueras and N. V. , Sochinskii and J. M. , Perez and E. , Dieguez (2009) Development of CdZnTe doped with Bi for gamma radiation detection. CrystEngComm, 12 (2). 507-510 . ISSN 1466-8033
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Abstract
Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties.
| Item Type: | Article |
|---|---|
| Subjects: | Chemistry Crystallography |
| Divisions: | UNSPECIFIED |
| Depositing User: | Ms Neetu Chandra |
| Date Deposited: | 03 Apr 2012 06:40 |
| Last Modified: | 03 Apr 2012 06:40 |
| URI: | http://npl.csircentral.net/id/eprint/78 |
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