Gupta, Surbhi and Kumar, Ashok and Gupta, Vinay and Tomar, Monika (2019) Electrical properties of Strontium Barium Niobate (Sr0.6Ba0.4Nb2O6) thin films deposited by pulsed laser deposition technique. Vacuum, 160. pp. 434-439. ISSN 0042-207X

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Abstract

Growth of Sr0.6Ba0.4Nb2O6 (SBN60) thin films on Pt-Si substrate has been carried out using Pulsed Laser Deposition (PLD) technique by varying the oxygen pressure from 1.33 x 10(-3) mbar to 26.67 x 10(-3) mbar and at a fixed substrate temperature of 800 degrees C. The crystalline behavior of as-deposited films was studied using X-ray diffraction technique indicating the preferential growth along c-axis. The Metal-Ferroelectric-Metal (MFM) structure was used to measure the current-voltage (I-V) and dielectric properties of as-prepared SBN thin film. A large value of dielectric constant of about 503 at 1 MHz was obtained for SBN60 thin film with good ferroelectric polarization-hysteresis loop (P-r = 5.32 mu C/cm(2) and P-max = 9.86 mu C/cm(2). A high value of total stored energy density 4.60 J/cm(2) with an efficiency of 17% efficiently contributes towards its potential application in non-volatile memory devices.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	02 Mar 2020 07:33
Last Modified:	02 Mar 2020 07:33
URI:	http://npl.csircentral.net/id/eprint/4168

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