Sultana, Rabia and Gurjar, Ganesh and Patnaik, S. and Awana, V. P. S. (2018) Crystal growth and characterization of bulk Sb2Te3 topological insulator. Materials Research Express, 5 (4). 046107-046115. ISSN 2053-1591

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Abstract

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 degrees C), followed by slow cooling (2 degrees C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (001) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known (A(1g)(1), E-g(2) and A(1g)(2)) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto-transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 Kunder an applied field of 6 Tesla. The weak anti localization (WAL) related low field (+/- 2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami-Larkin-Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator(TI) and its brief physical property characterization.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s IOP Publishing.
Subjects:	Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Mr. Yogesh Joshi
Date Deposited:	29 Nov 2019 10:58
Last Modified:	29 Nov 2019 10:58
URI:	http://npl.csircentral.net/id/eprint/3880

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