Kaur, Harneet and Yadav, Sandeep and Srivastava, Avanish K. and Singh, Nidhi and Rath, Shyama and Schneider, Jorg J. and Sinha, Om P. and Srivastava, Ritu (2018) High-yield synthesis and liquid-exfoliation of two-dimensional belt-like hafnium disulphide. AIP Advances , 11 (1). pp. 343-353. ISSN 1998-0124

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Abstract

Producing environmentally stable monolayers and few-layers of hafnium disulphide (HfS2) with a high yield to reveal its unlocked electronic and optoelectronic applications is still a challenge. HfS2 is a layered two-dimensional material of group-IV transition metal dichalcogenides. For the first time, we demonstrate a simple and cost-effective method to grow layered belt-like nanocrystals of HfS2 with a notably large interlayer spacing followed by their chemical exfoliation. Various microscopic and spectroscopic techniques confirm that these as-grown crystals exfoliate into single or multiple layers in a few minutes using solvent assisted ultrasonification method in N-cyclohexyl-2-pyrrolidone. The exfoliated nanosheets of HfS2 exhibit an indirect bandgap of 1.3 eV with high stability against surface degradation. Furthermore, we demonstrate that these nanosheets hold potential for electronic applications by fabricating a field-effect transistor based on few-layered HfS2, exhibiting a field-effect mobility of 0.95 cm(2)/(V.s) with a high on/off current modulation ratio of 10,000 in ambient conditions. The method is scalable and has a potential significance for both academic and industrial purposes.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Springer Verlag.
Subjects:	Materials Science Applied Physics/Condensed Matter Nanoscience/ Nanotechnology Physical Chemistry/Chemical Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	17 Dec 2019 08:56
Last Modified:	17 Dec 2019 08:56
URI:	http://npl.csircentral.net/id/eprint/3785

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