Choudhary , A. and Joshi, T. and Biradar, A. M.
(2010)
Triboelectric activation of ferroelectric liquid crystal memory devices.
Applied Physics Letters, 97 (12).
124108-1-124108-3.
ISSN 1077-3118
Abstract
The switching of ferroelectric liquid crystal (FLC) memory device is achieved by triboelectric effect of externally connected insulator to the sample through a conductor. The positive and negative charges are induced by triboelectrification of polymers, depending on the nature of materials, and utilized to get the bright and dark states of the FLC memory device. These switching states are analyzed by electro-optical studies. This technique of polarization switching proves to be powerful for FLC devices exhibiting long-term memory. The charges, developed on the electrodes by this nonconventional technique, generate enough potential to switch the FLC molecules in memory state.
| Item Type: |
Article
|
| Additional Information: |
Copyright for this article belongs to M/s American Institute of Physics |
| Subjects: |
Physics |
| Divisions: |
UNSPECIFIED |
| Depositing User: |
Ms Neetu Chandra
|
| Date Deposited: |
24 Jul 2012 08:30 |
| Last Modified: |
24 Jul 2012 08:30 |
| URI: |
http://npl.csircentral.net/id/eprint/376 |
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