Sharma, Bhupendra K. and Khare, Neeraj and Kumar, Mahesh (2010) Stress Dependent Band Gap Shift and Valence Band Studies in ZnO Nanorods. Journal of Nanoscience and Nanotechnology, 10 (12). pp. 8424-8431. ISSN 1533-4880

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Abstract

ZnO nanorods are grown on seedless and ZnO seeded glass substrates using chemical solution method and their structural, morphological, optical and valence band studies have been carried out. On seedless substrate horizontal nanorods are observed whereas for the seeded substrates vertically aligned hollow and solid nanorods grows. X-ray diffraction analysis revealed the presence of tensile stress in the vertical nanorods. Blue shift has been observed in the band gap of the vertical nanorods as compared to the horizontal nanorods which is attributed to the presence of tensile stress in the vertically aligned nanorods. Photoluminescence spectra revealed the dominance of Zinc vacancies (VZn) related defects in the nanorods and oxygen defects are found to be higher in the vertically aligned nanorods as compared to the horizontal nanorods. The difference between the Fermi level and valence band maxima for horizontal, hollow vertical and solid vertical nanorods are found to be ∼0.56 eV, ∼0.70 eV and ∼0.92 eV respectively indicating the possibility of p-type of conduction in the nanorods which has been attributed to presence of VZn defects in the ZnO nanorods.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s American Scientific Publishers.
Uncontrolled Keywords:	ZNO; NANORODS; STRUCTURAL PROPERTIES; OPTICAL PROPERTIES; XPS
Subjects:	Chemistry Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	11 Jul 2012 07:53
Last Modified:	11 Jul 2012 07:53
URI:	http://npl.csircentral.net/id/eprint/323

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