Kumar, Praveen and Kumar, Mahesh and Shivaprasad, S. M. (2013) Residual thermal desorption studies of Ga adatoms on trenched Si(5512) surface. Applied Surface Science, 282. 348-350. ISSN 0169-4332

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Abstract

We present here the thermal stability studies of the room temperature adsorbed Ga/Si(5 5 12) interfaces in the monolayer coverage regime, using AES and LEED as in-situ UHV characterization probes. Ga grows in Stranski-Krastanov growth mode at RT on the 2 x 1 reconstructed Si(5 5 12) surface where islands form on top of 2 ML of flat pseudomorphic Ga, yielding a (1 x 1) LEED pattern for coverages of 1.2 ML and above. When this RT adsorbed Ga/Si(5 5 12) interface is annealed at different temperatures, initially the strained Ga adlayers relax by agglomerating into 3D islands on top of a single Ga monolayer with an activation energy of 0.19 eV in the temperature range of 200-300 degrees C. The remnant Ga monolayer with a sharp (1 x 1) LEED pattern desorbs at temperature >400 degrees C, yielding the (1 1 2)-6 x 1 and 2 x (3 3 7) sub-monolayer superstructural. Finally at 720 degrees C Ga completely desorbs from the surface and leaves the clean 2 x 1 reconstructed Si(5 5 12) surface. The studies demonstrate the richness of the atomically trenched high index Si(5 5 12) surface, in obtaining several anisotropic features that can be used as templates to grow self-assembled nanostructures.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Chemistry > Physical Chemistry Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	19 Jun 2020 11:07
Last Modified:	19 Jun 2020 11:07
URI:	http://npl.csircentral.net/id/eprint/3079

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