Kumar, Sushil and Dwivedi, Neeraj and Rauthan, C.M.S. and Panwar, O. S. (2009) Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes. Vacuum, 84 (7). pp. 882-889. ISSN 1879-2715

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Abstract

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) films were grown in an asymmetric rf PECVD system using C2H2 and N2 gaseous mixture. Deposition rate, stress, hardness, optical bandgap, refractive index, and electrical characteristics have been studied as a function of self bias. Microstructures of these films were also studied using LASER Raman technique. Finally nitrogen diluted a-C:H films were realized as n-type semiconductor in n-type a-C:H/p-type crystalline silicon hetrojunction diodes. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics have also been studied as a function of self bias on these heterojunction diodes.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Subjects:	Materials Science Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	22 Jun 2012 10:50
Last Modified:	22 Jun 2012 10:50
URI:	http://npl.csircentral.net/id/eprint/290

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