Agrawal, Kalpana and Srivastava, Ritu and Rajput, S. S. (2017) Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency (I-C/g(m)). IEEE Transactions on Electron Devices, 64. pp. 3353-3359. ISSN 0018-9383

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Abstract

For the first time, we are proposing characteristic equation, which describes the behavior of an organic permeable base transistor (OPBT). For this, an OPBT has been fabricated and studied through the experimentally obtained I-C/g(m) versus V-BE (base-emitter voltage) characteristics. The characteristic equation, i.e., collector current, I-C = k (V-BE - Vth)(n) has been obtained through curve fitting and mathematical formulations. Six OPBTs (modified by inserting a layer of barrier material of either N,N' [(-di-[(alpha-naphthyl)-N, N,N' -diphenyl]-1,1' -biphenyl)-4,4' -diamine (alpha-NPD) or N,N' -Bis(naphthalen-1-yl)-N,N' -bis(phenyl)-2,7-diamino-9, 9-(Spiro-NPB) betweenemitter and base layers) confirmthat their transfer characteristics follow this equation with n varying between 1.1 and 2.2. The n has been found to be dependent on barrier material. The gain of the device is A(O) = nV(E)/V-BE, V-E being the early voltage.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Institute of Electrical and Electronics Engineers.
Subjects:	Engineering > Electronics and Electrical Engineering Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	12 Nov 2018 07:27
Last Modified:	12 Nov 2018 07:27
URI:	http://npl.csircentral.net/id/eprint/2789

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