Ch, Ramesh and Tyagi, P. and Maurya, K. K. and Kumar, M. Senthil and Kushvaha, S. S. (2017) Growth and Characterizations of various GaN Nanostructures on C-plane Sapphire using Laser MBE. Solid State Physics: Proceedings Of The 55th DAE Solid State Physics Symposium 2010, PTS A and B, 1832 (080078). 080078-1-080078-3. ISSN 0094-243X

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Abstract

We have grown various GaN nanostructures such as three-dimensional islands, nanowalls and nanocolumns on c-plane sapphire substrates using laser assisted molecular beam epitaxy (LMBE) system. The shape of the GaN nanostructures was controlled by using different nucleation surfaces such as bare and nitridated sapphire with GaN or AlN buffer layers. The structural and surface morphological properties of grown GaN nanostructures were characterized by ex-situ high resolution x-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy. The symmetric x-ray rocking curve along GaN (0002) plane shows that the GaN grown on pre-nitridated sapphire with GaN or AlN buffer layer possesses good crystalline quality compared to sapphire without nitridation. The Raman spectroscopy measurements revealed the wurtzite phase for all the GaN nanostructures grown on c-sapphire.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s American Institute of Physic.
Subjects:	Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	10 Oct 2018 08:22
Last Modified:	10 Oct 2018 08:22
URI:	http://npl.csircentral.net/id/eprint/2732

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