Sharma, Ramakant and Lee, Hyunwoo and Borse, Kunal and Gupta, Vinay (2017) Ga-doped ZnO as an electron transport layer for PffBT4T-20D: PC70BM organic solar cells. Organic Electronics, 43. pp. 207-213. ISSN 1566-1199

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Abstract

Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of polyl(5,6-difluoro-2,1,3-benzothiadiazo1-4,7-diy1)-alt-(3,3"'-di(2-octyldode-cyl)-2,2'; 5',2";-5",2"'-quaterthio-phen-5,5"'-diyI)I (PffBT4T-20D):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/13ffBT4T20D:PC70BM (270 nm)/MoO3 (20 nm)/AI (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	10 Oct 2018 08:16
Last Modified:	10 Oct 2018 08:16
URI:	http://npl.csircentral.net/id/eprint/2729

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