Singh, Pooja and Rout, P. K. and Singh, Manju and Rakshit, R. K. and Dogra, Anjana (2017) Ferroelectric memory resistive behavior in BaTiO3/Nb doped SrTiO3 heterojunctions. Thin Solid Films, 643. 60-64. ISSN 0040-6090

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Abstract

We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science > Materials Science Applied Physics/Condensed Matter Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	28 Sep 2018 08:31
Last Modified:	28 Sep 2018 08:31
URI:	http://npl.csircentral.net/id/eprint/2721

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