Thakre, Atul and Kumar, Ashok (2017) Bipolar resistive switching in PVDF and Graphene Oxide heterostructure thin films. Journal of Alloys and Compounds, 722. pp. 579-584. ISSN 0925-8388

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Abstract

Resistive switching behavior in Graphene oxide (GO) is well studied, however, the various mechanisms responsible for this phenomenon are still under extensive debate. We present repeatable bipolar resistive switching in GO thin films sandwiched between two insulating polymer PVDF (Polyvinylidene Fluoride) grown on conducting indium tin oxide (ITO) covered glass substrate. The device heterostructure (Al/PVDF/GO/PVDF/ITO) showed bipolar resistance states switching between low resistance state (LRS) to high resistance state (HRS) with a large ON/OFF ratio of 10(3) and resistance retention potential up to 10(4) s. In LRS, in the low applied voltage region, ohmic conduction was the main reason for current conduction in devices; however, traps filled/assisted conduction mechanism dominates in the higher voltage region. The PVDF/GO/PVDF heterostructure shows that oxygen vacancies are responsible for the formation of current conducting filaments. The low operating voltage (< 3 V) and long-term stability of resistance states make it a promising candidate for possible applications as Resistive Random Access Memory (ReRAM) elements.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Chemistry > Physical Chemistry Materials Science Metallurgy & Metallurgical Engineering
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	24 Aug 2018 07:36
Last Modified:	24 Aug 2018 07:36
URI:	http://npl.csircentral.net/id/eprint/2626

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