Srivastava, A. K. and Sood, K. N. and Kishore, R. and Naseem, H. A. (2006) Interfacial diffusion effect on metal induced crystallization of an amorphous silicon - A microstructural pathway. Electrochemical and Solid-State Letters , 9. G219-G221. ISSN 1099-0062

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Abstract

In situ annealing experiments on hydrogenated amorphous-Si thin films coated with a thin layer of Al were performed under a scanning electron microscope equipped with a heating stage and an energy dispersive spectroscope. A sequential change in microstructural features due to interfacial diffusion at the apex of the boundary between Al and amorphous Si has been delineated. Transmission electron microscopy studies affirmed the evolution of polycrystalline Si as a result of the phase transition from amorphous to randomly oriented fine grained Si. A possible mechanism has been postulated to explore the metallurgical aspects of crystallization phenomena that persists during phase transformation.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Electrochemical Society.
Subjects:	Electrochemistry Materials Science
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	11 May 2018 05:07
Last Modified:	11 May 2018 05:07
URI:	http://npl.csircentral.net/id/eprint/2493

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