Srivastava, Sanjay K. and Vankar, V. D. and Rao, D. V. Sridhar and Kumar, Vikram (2006) Enhanced field emission characteristics of nitrogen-doped carbon nanotube films grown by microwave plasma enhanced chemical vapor deposition process. Thin Solid Films, 515 (4). pp. 1851-1856. ISSN 0040-6090

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Abstract

Nitrogen-doped carbon nanotube (CNT) films have been synthesized by simple microwave plasma enhanced chemical vapor deposition technique. The morphology and structures were investigated by scanning electron microscopy and high resolution transmission electron microscopy. Morphology of the films was found to be greatly affected by the nature of the substrates. Vertically aligned CNTs were observed on mirror polished Si substrates. On the other hand, randomly oriented flower like morphology of CNTs was found on mechanically polished ones. All the CNTs were found to have bamboo structure with very sharp tips. These films showed very good field emission characteristics with threshold field in the range of 2.65-3.55 V/mu m. CNT film with flower like morphology showed lower threshold field as compared to vertically aligned structures. Open graphite edges on the side surface of the bamboo-shaped CNT are suggested to enhance the field emission characteristics which may act as additional emission sites.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Subjects:	Materials Science Applied Physics/Condensed Matter Physics
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	09 May 2018 12:00
Last Modified:	09 May 2018 12:00
URI:	http://npl.csircentral.net/id/eprint/2469

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