Bhagwat, Vinay and Xiao, Yegao and Bhat, Ishwara and Dutta, Partha and Refaat, Tamer F. and Nurul, Abedin M. and Kumar, Vikram (2006) Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 mu m. Journal of Electronic Materials , 35 (8). pp. 1613-1617. ISSN 0361-5235

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Abstract

This paper reports the fabrication and characterization of GaInAsSb photodetectors operating at 2 mu m. At room temperature, the performance of these photodiodes under reverse bias conditions is limited by the surface leakage. A model has been developed to separate the bulk (diffusion and generation-recombination (g-r)) and the surface leakage contributions toward the total leakage current. By fitting this model to the experimental data, values of material parameters such as minority carrier diffusion length and lifetime have been estimated. The highest R(0)A of 55 Omega-cm(2) has been obtained with a responsivity of 0.44 A/W at 2 mu m.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Institute of Electrical and Electronics Engineers.
Subjects:	Engineering Engineering > Electronics and Electrical Engineering Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Users 27 not found.
Date Deposited:	07 May 2018 08:28
Last Modified:	07 May 2018 08:28
URI:	http://npl.csircentral.net/id/eprint/2416

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