Ramkumar, S. and Rajarajan, G. and Singh, H. K. (2016) Structural, magnetic and electrical transport properties of Sm0.43Nd0.10Sr0.47MnO3 thin film by DC-magnetron sputtering. Journal of Materials Science: Materials in Electronics, 27 (5). 5114-5120 . ISSN 0957-4522

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Abstract

The paper contributes the preparation and characterization of Sm0.43Nd0.10Sr0.47MnO3 thin film. The thin film deposited on the single crystal of LaAlO3 (001) substrates by DC-magnetron sputtering at 1053 K at a pressure of 200 m Torr. The deposited thin film was found to have insulating behavior when annealed in oxygen atmosphere at 1223 K for 24 h. The X-ray diffraction (XRD) study shows that, both 30 nm and 60 nm thin films reveal compressive strain. The magnetic measurement (M-H) shows that the paramagnetic to ferromagnetic transition temperature of 60 nm film is 145 K. At higher film thickness (similar to 60 nm) a sharp insulator-to-metal transition is observed at 142 K (T-IM = 142 K). 60 nm film show a huge temperature co-efficient of resistance (TCR) and low field magneto resistance/an-isotropic magneto resistance (MR/AMR) is observed. The difference in the magneto transport properties of the two films have been explained in terms of presence of the magnetically and structurally disordered layer at the film-substrate interface.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Springer Verlag.
Subjects:	Engineering > Electronics and Electrical Engineering Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	20 Apr 2018 07:40
Last Modified:	20 Apr 2018 07:40
URI:	http://npl.csircentral.net/id/eprint/2371

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