Sharma, Mansi and Juneja, Sucheta and Sudhakar, S. and Chaudhary, Deepika and Kumar, Sushil (2016) Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells. Materials Science in Semiconductor Processing , 43. pp. 41-46. ISSN 1369-8001

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Abstract

In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon (a-Si: H) solar cells. Initially, intrinsic and extrinsic (p and n type) a-Si:H layers were grown in a low pressure regime (0.5-0.1 Torr) using the conventional RF plasma-enhanced chemical vapor deposition process and their opto-electronic properties were optimized for the fabrication of p-i-n a-Si:H solar cells. Subsequently, we obtained new insights in terms of the activation energy and band gap at the p/i interface in these solar cells. The absorber layers deposited at pressures of 0.23 Torr and 0.53 Torr had the highest photosensitivity with a band absorption edge at similar to 700 nm. Furthermore, the photosensitivity was shown to be correlated with the estimated diffusion length, which effectively defined the carrier transport within the solar cell layers. Moreover, the cell efficiency increased from 1.53% to 5.56% due to the improved p/i interface as well as the higher photosensitivity of the intrinsic/absorber layer.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier.
Uncontrolled Keywords:	Amorphous silicon p/i interface Plasma-enhanced chemicalvapordeposition Solar cell
Subjects:	Engineering > Electronics and Electrical Engineering Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	12 Apr 2018 06:44
Last Modified:	12 Apr 2018 06:44
URI:	http://npl.csircentral.net/id/eprint/2314

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