Tyagi, Priyanka and Srivastava, Ritu and Kumar, Arunandan and Chauhan, Gayatri and Kumar, Amit and Bawa, S. S. and Kamalasanan, M. N. (2010) Low voltage organic light emitting diode using p–i–n structure. Synthetic Metals, 160 (9-10). pp. 1126-1129. ISSN 0379-6779

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Abstract

Efficient n-type doping has been achieved by doping Liq in electron transport material Alq3. Detailed investigation of current density–voltage characteristics of electron only devices with different doping concentrations of Liq in Alq3 has been performed. An increase in current density by two orders of magnitude has been achieved with 33 wt% of Liq doped in Alq3. Organic light emitting diode with p–i–n structure was fabricated using F4-TCNQ doped α-NPD as hole transport layer, Ir(ppy)3 doped CBP as emitting layer and 33 wt% Liq doped Alq3 as electron transport layer. Comparison of OLEDs fabricated using undoped Alq3 and 33 wt% Liq doped Alq3 as electron transport layer shows reduction in turn on voltage from 5 to 2.5 V and enhancement of power efficiency from 5.8 to 10.6 lm/W at 5 V.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	Organic semiconductor; n-Type doping; Energetic disorder; p–i–n structure
Subjects:	Materials Science Physics Polymer Science
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	04 Jun 2012 07:46
Last Modified:	04 Jun 2012 07:46
URI:	http://npl.csircentral.net/id/eprint/225

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