Muhunthan, N. and Singh, Om Pal and Toutam, Vijaykumar and Singh, V. N. (2015) Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques. Materials Research Bulletin, 70. 373-378 . ISSN 0025-5408
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Abstract
Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.
Item Type: | Article |
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Uncontrolled Keywords: | Thin films Sputtering Atomic force microscopy Surface properties |
Subjects: | Materials Science |
Divisions: | UNSPECIFIED |
Depositing User: | Dr. Rajpal Walke |
Date Deposited: | 22 Sep 2016 06:03 |
Last Modified: | 22 Sep 2016 06:03 |
URI: | http://npl.csircentral.net/id/eprint/1788 |
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