Chauhan, Amit Kumar Singh and Kumar, Mukesh and Gupta, Govind (2015) Catalyst free self-assembled growth of InN nanorings on stepped Si (553) surface. Applied Surface Science , 345. pp. 156-161. ISSN 0169-4332

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Abstract

A novel technique for synthesis of high crystalline quality self-assembled InN nanorings, by nitriding the bulk deposited In/Si (5 5 3)-1 x 4 system using low energy N-2(+) ions at 520 degrees C, has been demonstrated. Scanning electron microscopy images reveal the formation of ring shaped InN structures with average size similar to 500 nm. Anisotropic strain relaxation via self assembly could be the driving force for the formation of these InN rings on reconstructed Si (5 5 3) surface. High resolution X-ray diffraction analysis indicates high crystalline quality of these wurtzite InN nanostructures with c-plane. A strong downward band bending was observed in X-ray photoelectron spectroscopy valence band spectra which signify the large electron accumulation in the InN nanostructures.

Item Type:	Article
Uncontrolled Keywords:	InN Si(553) XPS SEM XRD
Subjects:	Chemistry > Physical Chemistry Materials Science > Materials Science Applied Physics/Condensed Matter
Divisions:	UNSPECIFIED
Depositing User:	Dr. Rajpal Walke
Date Deposited:	19 Sep 2016 07:20
Last Modified:	19 Sep 2016 07:20
URI:	http://npl.csircentral.net/id/eprint/1732

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